IndiumV3, Main, Repository, bibRecord, 006095

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

Identifieur interne : 006095 ( Main/Repository ); précédent : 006094; suivant : 006096

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

Auteurs : RBID : Pascal:08-0381842

Descripteurs français

Pascal (Inist)
- Optimisation, Lumière bleue, Lumière verte, Diode électroluminescente, Brillance, Piézoélectricité, Microscopie électronique transmission, Microscopie électronique balayage, Haute résolution, Diffraction RX, Microscopie force atomique, Luminescence, Photoluminescence, Cathodoluminescence, Technologie planaire, Dactyloscopie, Défaut empilement, Evaluation performance, Effet Stark confinement quantique, Onde entretenue, Pastille électronique, Dispositif optoélectronique, 0779.

English descriptors

KwdEn :
- Atomic force microscopy, Blue light, Brightness, Cathodoluminescence, Continuous wave, Fingerprint identification, Green light, High resolution, Light emitting diode, Luminescence, Optimization, Optoelectronic device, Performance evaluation, Photoluminescence, Piezoelectricity, Planar technology, Quantum confined Stark effect, Scanning electron microscopy, Stacking fault, Transmission electron microscopy, Wafer, X ray diffraction.

Abstract

Bluish-green semipolar GaInN/GaN light emitting diodes (LEDs) were investigated as possible candidates for high-brightness devices even in the long wavelength visible regime. To combine the high material quality known from c-GaN and the advantages of a reduced piezoelectric field, the LED structures were realized on the {1101} side facets of selectively grown GaN stripes with triangular cross section. Structural investigations using transmission electron microscopy, scanning electron microscopy, high resolution x-ray diffraction, and atomic force microscopy have been performed and could be related to the luminescence properties in photoluminescence and cathodoluminescence. The defect-related luminescence peaks at 3.3 eV and 3.42eV typically observed in planar non- and semipolar GaN structures as fingerprints of prismatic and basal plane stacking faults, respectively, could be eliminated in our facet LED structures by optimized growth conditions. Furthermore, indium incorporation efficiency for these {1101} facets is found to be about 50% higher as compared to c-plane growth, what helps significantly to achieve longer wavelength emission in spite of the reduced quantum confined Stark effect in such non- and semipolar materials. Combining these findings, we could realize a bluish-green semipolar light emitting diode on the side facets of our GaN stripes. Continuous wave on-wafer optical output powers as high as 240 μW @ 20 mA could be achieved for about 500 nm emission wavelength in electroluminescence measurements. The external efficiency was nearly constant for the investigated current range. Furthermore, the relatively small wavelength shift of about 3 nm for currents between 10mA and 100 mA confirmed the reduced piezoelectric field in our LED structures.

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Pascal:08-0381842

Le document en format XML

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<term>Continuous wave</term>
<term>Fingerprint identification</term>
<term>Green light</term>
<term>High resolution</term>
<term>Light emitting diode</term>
<term>Luminescence</term>
<term>Optimization</term>
<term>Optoelectronic device</term>
<term>Performance evaluation</term>
<term>Photoluminescence</term>
<term>Piezoelectricity</term>
<term>Planar technology</term>
<term>Quantum confined Stark effect</term>
<term>Scanning electron microscopy</term>
<term>Stacking fault</term>
<term>Transmission electron microscopy</term>
<term>Wafer</term>
<term>X ray diffraction</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Optimisation</term>
<term>Lumière bleue</term>
<term>Lumière verte</term>
<term>Diode électroluminescente</term>
<term>Brillance</term>
<term>Piézoélectricité</term>
<term>Microscopie électronique transmission</term>
<term>Microscopie électronique balayage</term>
<term>Haute résolution</term>
<term>Diffraction RX</term>
<term>Microscopie force atomique</term>
<term>Luminescence</term>
<term>Photoluminescence</term>
<term>Cathodoluminescence</term>
<term>Technologie planaire</term>
<term>Dactyloscopie</term>
<term>Défaut empilement</term>
<term>Evaluation performance</term>
<term>Effet Stark confinement quantique</term>
<term>Onde entretenue</term>
<term>Pastille électronique</term>
<term>Dispositif optoélectronique</term>
<term>0779</term>
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<front><div type="abstract" xml:lang="en">Bluish-green semipolar GaInN/GaN light emitting diodes (LEDs) were investigated as possible candidates for high-brightness devices even in the long wavelength visible regime. To combine the high material quality known from c-GaN and the advantages of a reduced piezoelectric field, the LED structures were realized on the {1101} side facets of selectively grown GaN stripes with triangular cross section. Structural investigations using transmission electron microscopy, scanning electron microscopy, high resolution x-ray diffraction, and atomic force microscopy have been performed and could be related to the luminescence properties in photoluminescence and cathodoluminescence. The defect-related luminescence peaks at 3.3 eV and 3.42eV typically observed in planar non- and semipolar GaN structures as fingerprints of prismatic and basal plane stacking faults, respectively, could be eliminated in our facet LED structures by optimized growth conditions. Furthermore, indium incorporation efficiency for these {1101} facets is found to be about 50% higher as compared to c-plane growth, what helps significantly to achieve longer wavelength emission in spite of the reduced quantum confined Stark effect in such non- and semipolar materials. Combining these findings, we could realize a bluish-green semipolar light emitting diode on the side facets of our GaN stripes. Continuous wave on-wafer optical output powers as high as 240 μW @ 20 mA could be achieved for about 500 nm emission wavelength in electroluminescence measurements. The external efficiency was nearly constant for the investigated current range. Furthermore, the relatively small wavelength shift of about 3 nm for currents between 10mA and 100 mA confirmed the reduced piezoelectric field in our LED structures.</div>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Diodo electroluminescente</s0>
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<s5>05</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Brillantez</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>High resolution</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Alta resolucion</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Microscopie force atomique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Atomic force microscopy</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Microscopía fuerza atómica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Luminescence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Luminescence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Luminiscencia</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Photoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Photoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Fotoluminiscencia</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Cathodoluminescence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Cathodoluminescence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Catodoluminiscencia</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Technologie planaire</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Planar technology</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Tecnología planar</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Dactyloscopie</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Fingerprint identification</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Défaut empilement</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Stacking fault</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Defecto apilado</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Effet Stark confinement quantique</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Quantum confined Stark effect</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Onde entretenue</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Continuous wave</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Onda continua</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Pastille électronique</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Wafer</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Pastilla electrónica</s0>
<s5>21</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Optoelectronic device</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>31</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>0779</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>245</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Gallium nitride materials and devices. Conference</s1>
<s2>3</s2>
<s3>San Jose CA USA</s3>
<s4>2008</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
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Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

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